N-CHANNEL Power MOSFET featuring 55V Drain-Source Breakdown Voltage and 28A Continuous Drain Current. Offers a low 40mOhm maximum Drain-Source On-Resistance at a 10V gate drive. Designed for through-hole mounting with a maximum power dissipation of 68W and a fast turn-off delay time of 21ns. Operating temperature range from -55°C to 175°C, this RoHS compliant component boasts an input capacitance of 880pF.
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International Rectifier IRLU2705PBF technical specifications.
| Continuous Drain Current (ID) | 28A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 6.22mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 46W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8.9ns |
| DC Rated Voltage | 55V |
| Width | 2.39mm |
| RoHS | Compliant |
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