N-channel power MOSFET with 40V drain-source breakdown voltage and 130A continuous drain current. Features low 6.5mΩ drain-source resistance at 10Vgs and 140W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 25ns turn-on and 33ns turn-off delays. Packaged in a TO-251AA (IPAK-3) plastic through-hole mount with a 2.5V threshold voltage.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier IRLU3114ZPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 6.22mm |
| Input Capacitance | 3.81nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 4.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 25ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU3114ZPBF Datasheet
Download the complete datasheet for International Rectifier IRLU3114ZPBF to view detailed technical specifications.
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