N-channel power MOSFET with 40V drain-source breakdown voltage and 130A continuous drain current. Features low 6.5mΩ drain-source resistance at 10Vgs and 140W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 25ns turn-on and 33ns turn-off delays. Packaged in a TO-251AA (IPAK-3) plastic through-hole mount with a 2.5V threshold voltage.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier IRLU3114ZPBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
130A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
40V
Fall Time
50ns
Gate to Source Voltage (Vgs)
16V
Height
6.22mm
Input Capacitance
3.81nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
4.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
33ns
Turn-On Delay Time
25ns
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLU3114ZPBF Datasheet
Download the complete datasheet for International Rectifier IRLU3114ZPBF to view detailed technical specifications.
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