N-channel MOSFET transistor featuring 55V drain-source breakdown voltage and 89A continuous drain current. Offers low 8mR drain-source on-resistance and 130W maximum power dissipation. Designed for through-hole mounting in a TO-251-3 IPAK package, with fast switching characteristics including a 17ns turn-on delay and 70ns fall time. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageTO-251-3
Current Rating42A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLU3705ZPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 89A |
| Current Rating | 42A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8MR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 7.49mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 55V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU3705ZPBF Datasheet
Download the complete datasheet for International Rectifier IRLU3705ZPBF to view detailed technical specifications.
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