N-Channel Power MOSFET, featuring a 30V drain-source breakdown voltage and a low 6.8mΩ on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 110A and a maximum power dissipation of 140W. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 69ns fall time and a 30ns turn-off delay.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier IRLU8203PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 69ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.43nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| On-State Resistance | 6.8mR |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 6.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU8203PBF Datasheet
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