IRLU8259PBF

Datasheet

N-Channel MOSFET, 25V, 57A, 8.7mR, TO-251AA

International Rectifier

IRLU8259PBF

Name: IRLU8259PBF International Rectifier
Brand: International Rectifier
SKU: IRLU8259PBF

N-Channel MOSFET, 25V, 57A, 8.7mR, TO-251AA

N-channel power MOSFET featuring 25V drain-source breakdown voltage and 57A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8.7mΩ Rds(on) and 48W maximum power dissipation. Designed for through-hole mounting in a TO-251AA package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a turn-on delay of 8.4ns and a fall time of 8.9ns.

PackageTO-251-3

MountingThrough Hole

PolarityN-CHANNEL

Power48W

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Technical Specifications

International Rectifier IRLU8259PBF technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	57A
Drain to Source Breakdown Voltage	25V
Drain to Source Resistance	12.9mR
Drain to Source Voltage (Vdss)	25V
Dual Supply Voltage	25V
Fall Time	8.9ns
Gate to Source Voltage (Vgs)	20V
Height	6.22mm
Input Capacitance	900pF
Length	6.73mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	48W
Mount	Through Hole
Nominal Vgs	1.9V
Package Quantity	75
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	48W
Radiation Hardening	No
Rds On Max	8.7mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Termination	Through Hole
Turn-Off Delay Time	9.1ns
Turn-On Delay Time	8.4ns
Width	2.39mm