N-channel power MOSFET featuring 25V drain-source breakdown voltage and 57A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8.7mΩ Rds(on) and 48W maximum power dissipation. Designed for through-hole mounting in a TO-251AA package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a turn-on delay of 8.4ns and a fall time of 8.9ns.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power48W
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Technical Specifications
International Rectifier IRLU8259PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 57A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 12.9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Fall Time | 8.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 900pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Nominal Vgs | 1.9V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 9.1ns |
| Turn-On Delay Time | 8.4ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU8259PBF Datasheet
Download the complete datasheet for International Rectifier IRLU8259PBF to view detailed technical specifications.
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