N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source voltage and 18A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 60mΩ maximum drain-source on-resistance. Designed for surface mounting, it operates from -55°C to 175°C with a maximum power dissipation of 3.8W. Key switching characteristics include a 7.1ns turn-on delay and 20ns turn-off delay.
PackageD2PAK
Current Rating17A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRLZ24NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Current Rating
17A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
60mR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
16V
Height
4.83mm
Input Capacitance
480pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Power Dissipation
3.8W
Reach SVHC Compliant
No
Reverse Recovery Time
60ns
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
20ns
Turn-On Delay Time
7.1ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ24NSPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ24NSPBF to view detailed technical specifications.
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