N-Channel Power MOSFET, 55V Drain-Source Voltage, 30A Continuous Drain Current. Features 35mΩ Max Drain-Source On-Resistance and 68W Power Dissipation. Operates from -55°C to 175°C, with 8.9ns Turn-On Delay and 21ns Turn-Off Delay. Packaged in TO-262AA, this lead-free, RoHS compliant component is designed for through-hole mounting.
PackageTO-262
Current Rating30A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLZ34NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
35MR
Fall Time
29ns
Gate to Source Voltage (Vgs)
16V
Height
9.65mm
Input Capacitance
880pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
68W
Radiation Hardening
No
Rds On Max
35mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
21ns
Turn-On Delay Time
8.9ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ34NLPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ34NLPBF to view detailed technical specifications.
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