N-Channel Power MOSFET featuring 55V drain-source voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 35mΩ drain-source on-resistance and 68W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 8.9ns turn-on delay and 21ns turn-off delay.
PackageTO-220AB
Current Rating30A
MountingThrough Hole
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Technical Specifications
International Rectifier IRLZ34NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
35mR
Dual Supply Voltage
55V
Fall Time
29ns
Gate to Source Voltage (Vgs)
16V
Height
8.77mm
Input Capacitance
880pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Mount
Through Hole
Nominal Vgs
2V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
21ns
Turn-On Delay Time
8.9ns
DC Rated Voltage
55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ34NPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ34NPBF to view detailed technical specifications.
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