N-Channel Power MOSFET featuring 55V drain-source voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 35mΩ drain-source on-resistance and 68W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 8.9ns turn-on delay and 21ns turn-off delay.
PackageTO-220AB
Current Rating30A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRLZ34NPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 35mR |
| Dual Supply Voltage | 55V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 8.77mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8.9ns |
| DC Rated Voltage | 55V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLZ34NPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ34NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
