N-channel power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 60mΩ drain-source on-resistance and 68W power dissipation. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 8.9ns and fall time of 29ns.
PackageD2PAK
Current Rating30A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRLZ34NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
60mR
Dual Supply Voltage
55V
Fall Time
29ns
Gate to Source Voltage (Vgs)
16V
Height
4.83mm
Input Capacitance
880pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
68W
Reach SVHC Compliant
No
Reverse Recovery Time
76ns
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
21ns
Turn-On Delay Time
8.9ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ34NSPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ34NSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
