N-channel power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 60mΩ drain-source on-resistance and 68W power dissipation. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 8.9ns and fall time of 29ns.
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International Rectifier IRLZ34NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 60mR |
| Dual Supply Voltage | 55V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 880pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 76ns |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8.9ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
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