Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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International Rectifier IRLZ44Z technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 1.62nF |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 13.5mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
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