International Rectifier
IRLZ44ZLPBF
Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRLZ44ZLPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
51A
Drain to Source Voltage (Vdss)
55V
Fall Time
42ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
1.62nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
13.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
25ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ44ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ44ZLPBF to view detailed technical specifications.
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