N-Channel Power MOSFET, 55V drain-source voltage, 51A continuous drain current, and 13.5mΩ maximum on-resistance. Features a TO-263AB (D2PAK) surface-mount package, 175°C maximum operating temperature, and 80W maximum power dissipation. Silicon metal-oxide semiconductor FET with 1.62nF input capacitance and 14ns turn-on delay. Lead-free and RoHS compliant.
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International Rectifier IRLZ44ZSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 51A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 13.5MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 1.62nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| On-State Resistance | 13.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
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