Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN
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International Rectifier JANTX2N7236U technical specifications.
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
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