Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
