International Rectifier
SI4410DYPBF
Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
PackageSOIC
Current Rating10A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier SI4410DYPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.585nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Power Dissipation
2.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
38ns
Turn-On Delay Time
11ns
DC Rated Voltage
30V
Width
4.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier SI4410DYPBF Datasheet
Download the complete datasheet for International Rectifier SI4410DYPBF to view detailed technical specifications.
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