General purpose rectifier diode, featuring a single silicon element for efficient rectification. This axial-leaded component offers a maximum repetitive peak reverse voltage of 200V and a continuous forward current rating of 3A. Designed for operation up to 175°C, it provides reliable performance in demanding applications. The two-terminal configuration ensures straightforward integration into electronic circuits.
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Technical Specifications
International Semiconductor 1N5417 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
AXIAL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
200
Compliance
REACH
unknown
Military Spec
False
Datasheet
International Semiconductor 1N5417 Datasheet
Download the complete datasheet for International Semiconductor 1N5417 to view detailed technical specifications.
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