General purpose rectifier diode, featuring a single silicon element for efficient rectification. This axial-leaded component offers a maximum repetitive peak reverse voltage of 200V and a continuous forward current rating of 3A. Designed for operation up to 175°C, it provides reliable performance in demanding applications. The two-terminal configuration ensures straightforward integration into electronic circuits.
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Technical Specifications
International Semiconductor 1N5417 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor 1N5417 Datasheet
Download the complete datasheet for International Semiconductor 1N5417 to view detailed technical specifications.
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