The 1N5446A is a silicon variable capacitance diode with a maximum reverse voltage of 30V and a maximum power dissipation of 0.4W. It features an axial lead package with a JEDEC code of DO-7. The diode element is made of silicon and has a minimum breakdown voltage of 30V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the International Semiconductor 1N5446A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-7 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 30 |
| Power Dissipation-Max | 0.4 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for International Semiconductor 1N5446A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
