Variable Capacitance Diode, 82pF C(T), 65V, Silicon, DO-7
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International Semiconductor 1N5709B technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-7 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Rep Pk Reverse Voltage-Max | 60 |
| Breakdown Voltage-Min | 65 |
| Power Dissipation-Max | 0.4 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
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