The P6KE33 transient voltage suppressor diode from International Semiconductor features a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a unidirectional polarity and is made of silicon. The diode is a single element with a maximum reverse voltage of 26.8 volts and a nominal breakdown voltage of 33 volts. It can handle a maximum non-repetitive peak reverse power dissipation of 600 watts and a maximum clamping voltage of 47.7 volts.
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| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 26.8 |
| Breakdown Voltage-Min | 29.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 47.7 |
| Breakdown Voltage-Nom | 33 |
| Breakdown Voltage-Max | 36.3 |
| Power Dissipation-Max | 1 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
