Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, 120V repetitive peak reverse voltage. Features a single silicon diode element with a minimum breakdown voltage of 133V and a maximum clamping voltage of 193V. Operates across a temperature range of -40°C to 150°C, with two terminals in a dual position.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMBJ120A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 120 |
| Breakdown Voltage-Min | 133 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 193 |
| Breakdown Voltage-Nom | 140 |
| Breakdown Voltage-Max | 147 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor SMBJ120A Datasheet
Download the complete datasheet for International Semiconductor SMBJ120A to view detailed technical specifications.
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