Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, 120V repetitive peak reverse voltage. Features a single silicon diode element with a minimum breakdown voltage of 133V and a maximum clamping voltage of 193V. Operates across a temperature range of -40°C to 150°C, with two terminals in a dual position.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMBJ120A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-40
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
120
Breakdown Voltage-Min
133
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
193
Breakdown Voltage-Nom
140
Breakdown Voltage-Max
147
Power Dissipation-Max
1
Compliance
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
International Semiconductor SMBJ120A Datasheet
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