Unidirectional transient voltage suppressor diode designed for circuit protection. Features a 12V repetitive peak reverse voltage and 600W non-repetitive peak reverse power dissipation. Offers a minimum breakdown voltage of 13.3V and a maximum clamping voltage of 19.9V. Constructed with silicon for a single element and operates across a temperature range of -40°C to 150°C. This two-terminal device provides robust voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMBJ12A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 19.9 |
| Breakdown Voltage-Nom | 14 |
| Breakdown Voltage-Max | 14.7 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor SMBJ12A Datasheet
Download the complete datasheet for International Semiconductor SMBJ12A to view detailed technical specifications.
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