Unidirectional transient voltage suppressor diode designed for circuit protection. Features a 12V repetitive peak reverse voltage and 600W non-repetitive peak reverse power dissipation. Offers a minimum breakdown voltage of 13.3V and a maximum clamping voltage of 19.9V. Constructed with silicon for a single element and operates across a temperature range of -40°C to 150°C. This two-terminal device provides robust voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMBJ12A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-40
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
12
Breakdown Voltage-Min
13.3
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
19.9
Breakdown Voltage-Nom
14
Breakdown Voltage-Max
14.7
Power Dissipation-Max
1
Compliance
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
International Semiconductor SMBJ12A Datasheet
Download the complete datasheet for International Semiconductor SMBJ12A to view detailed technical specifications.
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