Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, featuring a 33V repetitive peak reverse voltage. This silicon diode offers a minimum breakdown voltage of 36.7V and a maximum clamping voltage of 53.3V. Designed with a single silicon element and two terminals, it operates across a temperature range of -40°C to 150°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMBJ33A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-40
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
33
Breakdown Voltage-Min
36.7
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
53.3
Breakdown Voltage-Nom
38.7
Breakdown Voltage-Max
40.6
Power Dissipation-Max
1
Compliance
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
International Semiconductor SMBJ33A Datasheet
Download the complete datasheet for International Semiconductor SMBJ33A to view detailed technical specifications.
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