Unidirectional transient voltage suppressor diode featuring 3000W peak reverse power dissipation and a repetitive peak reverse voltage of 33V. This silicon diode offers a minimum breakdown voltage of 36.7V, a nominal breakdown voltage of 38.7V, and a maximum breakdown voltage of 40.6V. With a maximum clamping voltage of 53.3V, it operates across a temperature range of -65°C to 175°C and has two terminals.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMLJ33A technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 3000 |
| Clamping Voltage-Max | 53.3 |
| Breakdown Voltage-Nom | 38.7 |
| Breakdown Voltage-Max | 40.6 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor SMLJ33A Datasheet
Download the complete datasheet for International Semiconductor SMLJ33A to view detailed technical specifications.
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