Unidirectional transient voltage suppressor diode featuring 3000W peak reverse power dissipation and a repetitive peak reverse voltage of 33V. This silicon diode offers a minimum breakdown voltage of 36.7V, a nominal breakdown voltage of 38.7V, and a maximum breakdown voltage of 40.6V. With a maximum clamping voltage of 53.3V, it operates across a temperature range of -65°C to 175°C and has two terminals.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMLJ33A technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
DUAL
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
33
Breakdown Voltage-Min
36.7
Non-rep Peak Rev Power Dis-Max
3000
Clamping Voltage-Max
53.3
Breakdown Voltage-Nom
38.7
Breakdown Voltage-Max
40.6
Compliance
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
International Semiconductor SMLJ33A Datasheet
Download the complete datasheet for International Semiconductor SMLJ33A to view detailed technical specifications.
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