NPN bipolar junction transistor array featuring a 15V collector-emitter breakdown voltage and a maximum collector current of 100mA. This through-hole component offers a gain bandwidth product and transition frequency of 450MHz, with a collector-emitter saturation voltage of 700mV. Packaged in a PDIP with tin, matte contact plating, it operates within a temperature range of -55°C to 125°C and has a maximum power dissipation of 500mW.
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| Package/Case | PDIP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 450MHz |
| Height | 4.95mm |
| Length | 19.68mm |
| Max Collector Current | 100mA |
| Max Frequency | 450MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 450MHz |
| Width | 7.11mm |
| RoHS | Compliant |
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