N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V breakdown voltage and 40A continuous collector current. This single-element device offers a maximum operating temperature of 150°C and is housed in a TO-247 package with three terminals.
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Technical Specifications
Intersil HGTG20N60B3D technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Intersil HGTG20N60B3D Datasheet
Download the complete datasheet for Intersil HGTG20N60B3D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.