The ISL6609IBZ is a dual gate driver IC from Intersil, featuring two channels with a maximum output current of 4A. Operating over a wide temperature range of -40°C to 85°C, this device is suitable for high-power applications. The IC is available in a SOIC package and is compliant with RoHS regulations. With a maximum power dissipation of 800mW, this gate driver IC is designed for efficient operation in various power management applications.
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Intersil ISL6609IBZ technical specifications.
| Package/Case | SOIC |
| Fall Time | 8ns |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 4A |
| Max Power Dissipation | 800mW |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Operating Supply Current | 132uA |
| Output Current | 4A |
| Package Quantity | 980 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Intersil ISL6609IBZ to view detailed technical specifications.
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