4Mb Parallel SRAM IC with 10ns access time, featuring an 18-bit address bus and 16-bit word size. This asynchronous memory offers a 4Mb density and operates with a 5V supply voltage, ranging from 4.5V to 5.5V. Packaged in a 44-pin TSOP II, it supports a temperature range of -40°C to 85°C and is RoHS compliant.
PackageTSOP
Current50mA
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Technical Specifications
Issi IS61C25616AL-10TLI technical specifications.
General
Access Time
10ns
Access Time-Max
10ns
Address Bus Width
18b
Package/Case
TSOP
Density
4Mb
Height
1.05mm
Interface
Parallel
Length
18.52mm
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Supply Voltage
5.5V
Memory Size
4Mb
Memory Type
SDR, , RAM, SRAM - Asynchronous
Min Supply Voltage
4.5V
Number of Ports
1
Number of Words
256000
Operating Supply Voltage
5V
Package Quantity
135
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
50mA
Sync/Async
Asynchronous
Width
10.29mm
Word Size
16b
Compliance
RoHS
Compliant
Datasheet
Issi IS61C25616AL-10TLI Datasheet
Download the complete datasheet for Issi IS61C25616AL-10TLI to view detailed technical specifications.
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