
9Mb Parallel SRAM IC with 3.1ns access time, operating at 200MHz. Features an 18-bit address bus, 36-bit word size, and 4 ports. This volatile memory component is housed in a 100-TQFP package, supporting a 3.3V operating supply voltage. It offers a wide temperature range from -40°C to 85°C and is RoHS compliant.
Issi IS61LPD25636A-200TQLI technical specifications.
| Access Time | 3.1ns |
| Access Time-Max | 3.1ns |
| Address Bus Width | 18b |
| Package/Case | TQFP |
| Density | 9Mb |
| Frequency | 200MHz |
| Interface | Parallel |
| Max Frequency | 200MHz |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.465V |
| Memory Size | 9Mb |
| Memory Type | SDR, , Volatile, SRAM |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 3.135V |
| Number of Ports | 4 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 72 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 275mA |
| Sync/Async | Synchronous |
| Word Size | 36b |
| RoHS | Compliant |
Download the complete datasheet for Issi IS61LPD25636A-200TQLI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
