Asynchronous SRAM chip, 8Mb density, 512K x 16 configuration, offering 10ns access time. Features a 16-bit word size and a 19-bit address bus. Operates with a 3V supply voltage range (2.4V to 3.6V) and a maximum operating temperature of 85°C. Packaged in a 44-pin TSOP-II, this RoHS compliant component is ideal for various electronic applications.
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Issi IS61WV51216EDBLL-10TLI technical specifications.
| Access Time | 10ns |
| Address Bus Width | 19b |
| Package/Case | TSOP |
| Density | 8Mb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Memory Size | 8Mb |
| Memory Type | Volatile, , SRAM, SDR, RAM, SRAM - Asynchronous |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 2.4V |
| Number of Ports | 1 |
| Number of Words | 512000 |
| Package Quantity | 135 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 50mA |
| Sync/Async | Asynchronous |
| Word Size | 16b |
| RoHS | Compliant |
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