8Mb Parallel SRAM IC, featuring 55ns access time and a 16-bit word size. This asynchronous, volatile memory component operates with a 2.5V to 3.6V supply voltage and a 3.3V nominal voltage. Housed in a compact 48-pin TFBGA package (7.3mm x 8.8mm x 0.9mm), it offers 512,000 words of storage and a maximum operating frequency of 18MHz. Designed for industrial temperature ranges (-40°C to 85°C), this lead-free and RoHS-compliant semiconductor is suitable for surface mounting.
Frequency18MHz
PackageTFBGA
Current5mA
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Technical Specifications
Issi IS62WV51216BLL-55BLI technical specifications.
General
Access Time
55ns
Access Time-Max
55ns
Address Bus Width
19b
Package/Case
TFBGA
Density
8Mb
Height
0.9mm
Interface
Parallel
JESD-30 Code
R-PBGA-B48
Lead Free
Lead Free
Length
8.8mm
Max Frequency
18MHz
Max Operating Temperature
85°C
Memory Size
8Mb
Memory Type
Volatile, , SRAM
Memory Width
16
Min Operating Temperature
-40°C
Max Supply Voltage
3.6V
Min Supply Voltage
2.5V
Number of Functions
1
Number of Ports
1
Number of Words
512000
Operating Supply Voltage
3.3V
Package Body Material
Plastic
Package Quantity
312
Package Shape
Rectangular
Packaging
Rail/Tube
Parallel/Serial
PARALLEL
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
5mA
Surface Mount
Yes
Sync/Async
Asynchronous
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Ball
Terminal Position
BOTTOM
Width
7.3mm
Word Size
16b
Compliance
RoHS
Compliant
Datasheet
Issi IS62WV51216BLL-55BLI Datasheet
Download the complete datasheet for Issi IS62WV51216BLL-55BLI to view detailed technical specifications.
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