This silicon rectifier is a 1 A device in ITT's 1N4001 through 1N4007 family and uses miniature plastic encapsulation. The 1N4002 version is rated for 100 V peak repetitive reverse voltage at 25°C. The datasheet lists 1 A half-wave resistive load current at 65°C ambient or 0.75 A at 100°C ambient, with maximum forward voltage of 1.1 V at 1 A and reverse current below 5 µA at rated reverse voltage. Junction temperature is rated to 150°C, thermal resistance is below 95 °C/W, and the device is specified for 10 A repetitive surge current and 50 A half-cycle surge current at 50 Hz and 25°C junction temperature.
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ITT 1N4002 technical specifications.
| Max Operating Temperature | 175 |
| Number of Elements | 1 |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for ITT 1N4002 to view detailed technical specifications.
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