N-channel MOSFET, surface mount, with a 250V drain-source voltage and 360mA continuous drain current. Features 4 ohm drain-source resistance and 1.1W maximum power dissipation. Operates from -55°C to 125°C, with 350pF input capacitance and 20V gate-source voltage. RoHS compliant, silicon metal-oxide semiconductor FET in a SOT-89-3 package.
PackageSOT-89-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Ixys CPC3703CTR technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
360mA
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
250V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
350pF
Lead Free
Lead Free
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
4R
RoHS Compliant
Yes
Weight
0.004603oz
Compliance
RoHS
Compliant
Datasheet
Ixys CPC3703CTR Datasheet
Download the complete datasheet for Ixys CPC3703CTR to view detailed technical specifications.
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