
N-channel MOSFET, surface mount, with a 250V drain-source voltage and 360mA continuous drain current. Features 4 ohm drain-source resistance and 1.1W maximum power dissipation. Operates from -55°C to 125°C, with 350pF input capacitance and 20V gate-source voltage. RoHS compliant, silicon metal-oxide semiconductor FET in a SOT-89-3 package.
Ixys CPC3703CTR technical specifications.
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