N-channel MOSFET, surface mount, with a 250V drain-source voltage and 360mA continuous drain current. Features 4 ohm drain-source resistance and 1.1W maximum power dissipation. Operates from -55°C to 125°C, with 350pF input capacitance and 20V gate-source voltage. RoHS compliant, silicon metal-oxide semiconductor FET in a SOT-89-3 package.
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Ixys CPC3703CTR technical specifications.
| Package/Case | SOT-89-3 |
| Continuous Drain Current (ID) | 360mA |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Weight | 0.004603oz |
| RoHS | Compliant |
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