DE150-201N09A

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 6 PIN

Frequency100MHz

PolarityN-CHANNEL

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Ixys DE150-201N09A technical specifications.

Continuous Drain Current (ID)	15A
Drain to Source Breakdown Voltage	200V
Frequency	100MHz
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	125°C
Polarity	N-CHANNEL
RoHS Compliant	Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.