RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D4, 6 PIN
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| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 1kV |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 940W |
| Power Dissipation | 940W |
| Reach SVHC Compliant | No |
| Resistance | 0.95R |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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