RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D5, 6 PIN
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Ixys DE475-501N44A technical specifications.
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 500V |
| Frequency | 30MHz |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.8kW |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Ixys DE475-501N44A to view detailed technical specifications.
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