Power Field-Effect Transistor, 100A I(D), 55V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4-PAC-5
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Ixys FDM100-0045SP technical specifications.
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 24 |
| Packaging | Rail/Tube |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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