The Ixys FID60-06D is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 65A. It has a maximum power dissipation of 200W and operates within a temperature range of -55°C to 150°C. The device is packaged in a through-hole configuration and is compliant with RoHS regulations. The FID60-06D features a turn-on delay time of 50ns and a turn-off delay time of 300ns.
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Ixys FID60-06D technical specifications.
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 65A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 24 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| RoHS Compliant | Yes |
| Series | FID60-06D |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 50ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys FID60-06D to view detailed technical specifications.
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