Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
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Ixys FMK75-01F technical specifications.
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 24 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 80ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys FMK75-01F to view detailed technical specifications.
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