Power Field-Effect Transistor, 13A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4-PAC-5
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Ixys FMM22-05PF technical specifications.
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 500V |
| FET Type | 2 N-Channel |
| Input Capacitance | 2.63nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 132W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| RoHS | Compliant |
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