Ixys
FMM22-06PF
Power Field-Effect Transistor, 12A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys FMM22-06PF technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Voltage (Vdss)
600V
FET Type
2 N-Channel
Input Capacitance
3.6nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
350mR
RoHS Compliant
Yes
Series
HiPerFET™, PolarHT™
Compliance
RoHS
Compliant
Datasheet
Ixys FMM22-06PF Datasheet
Download the complete datasheet for Ixys FMM22-06PF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.