Power Field-Effect Transistor, 300A I(D), 55V, 0.0036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
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Ixys FMM300-0055P technical specifications.
| Continuous Drain Current (ID) | 300A |
| Drain to Source Voltage (Vdss) | 55V |
| FET Type | 2 N-Channel |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Rds On Max | 3.6mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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