Ixys
FMM75-01F
Power Field-Effect Transistor, 75A I(D), 100V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys FMM75-01F technical specifications.
General
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
100V
Fall Time
60ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
25mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
80ns
Compliance
RoHS
Compliant
Datasheet
Ixys FMM75-01F Datasheet
Download the complete datasheet for Ixys FMM75-01F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.