Power Field-Effect Transistor, 26A I(D), 200V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
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Ixys FMP26-02P technical specifications.
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 200V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.72nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| RoHS | Compliant |
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