
N-channel enhancement mode MOSFET, 150V drain-source voltage, 50A continuous drain current. Features 6 elements per chip with TMOS process technology. Packaged in a 24-pin SMD configuration, measuring 37.5mm x 25mm x 5mm with a 3mm pin pitch. Operates from -55°C to 175°C, offering low 24mOhm drain-source resistance at 10V.
Ixys GMM3x60-015X2-SMD technical specifications.
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