N-channel enhancement mode MOSFET, 150V drain-source voltage, 50A continuous drain current. Features 6 elements per chip with TMOS process technology. Packaged in a 24-pin SMD configuration, measuring 37.5mm x 25mm x 5mm with a 3mm pin pitch. Operates from -55°C to 175°C, offering low 24mOhm drain-source resistance at 10V.
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Ixys GMM3x60-015X2-SMD technical specifications.
| Package Family Name | SMD |
| Package/Case | SMD |
| Package Description | Surface Mount Device |
| Pin Count | 24 |
| PCB | 24 |
| Package Length (mm) | 37.5 |
| Package Width (mm) | 25 |
| Package Height (mm) | 5 |
| Pin Pitch (mm) | 3 |
| Mounting | Surface Mount |
| Configuration | Hex |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 6 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 50A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 24@10VmOhm |
| Typical Gate Charge @ Vgs | 97@10VnC |
| Typical Gate Charge @ 10V | 97nC |
| Typical Input Capacitance @ Vds | 5800@25VpF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 6D7E2 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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