N-channel enhancement mode MOSFET, 150V drain-source voltage, 50A continuous drain current. Features 6 elements per chip with TMOS process technology. Packaged in a 24-pin SMD configuration, measuring 37.5mm x 25mm x 5mm with a 3mm pin pitch. Operates from -55°C to 175°C, offering low 24mOhm drain-source resistance at 10V.
PackageSMD
MountingSurface Mount
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Technical Specifications
Ixys GMM3x60-015X2-SMD technical specifications.
General
Package Family Name
SMD
Package/Case
SMD
Package Description
Surface Mount Device
Pin Count
24
PCB
24
Package Length (mm)
37.5
Package Width (mm)
25
Package Height (mm)
5
Pin Pitch (mm)
3
Mounting
Surface Mount
Configuration
Hex
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
6
Process Technology
TMOS
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±15V
Maximum Continuous Drain Current
50A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
24@10VmOhm
Typical Gate Charge @ Vgs
97@10VnC
Typical Gate Charge @ 10V
97nC
Typical Input Capacitance @ Vds
5800@25VpF
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
6D7E2
EU RoHS
Yes
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Ixys GMM3x60-015X2-SMD Datasheet
Download the complete datasheet for Ixys GMM3x60-015X2-SMD to view detailed technical specifications.
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