GWM160-0055P3

Power Field-Effect Transistor, 160A I(D), 55V, 0.0029ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Resistance2000000R

MountingSurface Mount

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Ixys GWM160-0055P3 technical specifications.

Continuous Drain Current (ID)

160A

Drain to Source Voltage (Vdss)

55V

Drain-source On Resistance-Max

2MR

FET Type

6 N-Channel

Lead Free

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

3mR

Resistance

2000000R

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.