Power Field-Effect Transistor, 160A I(D), 55V, 0.0029ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 2MR |
| FET Type | 6 N-Channel |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Rds On Max | 3mR |
| Resistance | 2000000R |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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