Ixys
GWM160-0055X1-SMD
Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 17 PIN
Power Field-Effect Transistor, 150A I(D), 55V, 0.0033ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 17 PIN
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys GWM160-0055X1-SMD technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 2.7MR |
| FET Type | 6 N-Channel |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 28 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 550ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys GWM160-0055X1-SMD Datasheet
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