Ixys
GWM70-01P2
Power Field-Effect Transistor, 70A I(D), 100V, 0.014ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
MountingSurface Mount
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Technical Specifications
Ixys GWM70-01P2 technical specifications.
General
Continuous Drain Current (ID)
70A
Drain to Source Voltage (Vdss)
100V
FET Type
6 N-Channel
Mount
Surface Mount
Package Quantity
20
Packaging
Rail/Tube
Rds On Max
14mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys GWM70-01P2 Datasheet
Download the complete datasheet for Ixys GWM70-01P2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.