IRFP254

Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

PackageTO-247AD

PolarityN-CHANNEL

Power190W

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Ixys IRFP254 technical specifications.

Package/Case	TO-247AD
Continuous Drain Current (ID)	23A
Drain to Source Breakdown Voltage	250V
Drain to Source Resistance	140mR
Fall Time	98ns
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	190W
RoHS Compliant	Yes
Turn-Off Delay Time	110ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.