Ixys
IRFP264
Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power280W
Quick Jump:
Technical Specifications
Ixys IRFP264 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
38A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
250V
Fall Time
92ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.8nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
280W
Radiation Hardening
No
Rds On Max
75mR
RoHS Compliant
Yes
Turn-Off Delay Time
110ns
Compliance
RoHS
Compliant
Datasheet
Ixys IRFP264 Datasheet
Download the complete datasheet for Ixys IRFP264 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
