N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 400mΩ drain-source on-resistance and 190W maximum power dissipation. Designed for through-hole mounting in a TO-247AD package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 2.8nF input capacitance, 44ns fall time, and 92ns turn-off delay time. This RoHS compliant component is lead-free.
Sign in to ask questions about the Ixys IRFP450 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IRFP450 technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 92ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IRFP450 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
